SMDJ100A,SMDJ100A瞬态抑制二极管,SMDJ100A二极管参数
SMDJ100A瞬态抑制二极管,SMDJ100A功率3000W,SMDJ100A丝印PGZ,100V SMC封装TVS二极管规格书参数,SMDJ100A单向TVS管
SMDJ100A瞬态抑制二极管,SMDJ100A功率3000W,SMDJ100A丝印PGZ,100V SMC封装TVS二极管规格书参数,SMDJ100A单向TVS管

SMDJ100A SMA封装参数:点击查看

SMDJ100A封装为DO-214AB/SMC
100V瞬态抑制二极管参数如下:
DEVICE MARKING CODE 丝印:PGZ
Peak Pulse Power Dissipation on 功率损耗Pppm:3000W
REVERSE STANDOFF VOLTAGE VRWM (V) 反向对峙电压:100V
BREAKDOWN VOLTAGE VBR (V) MIN. @ IT 崩溃电压(最小):111V
BREAKDOWN VOLTAGE VBR (V) MAX. @ IT 崩溃电压(最大):123V
TEST CURRENT (IT) mA 测试电流:1mA
MAXIMUM CLAMPING VOLTAGE @IPP VC (V) 最大嵌位电压:162V
PEAK PULSE CURRENT IPP (A) 峰值脉冲电流:18.5A
REVERSE LEAKAGE @ VRWM IR (μA) 反向漏电:2μA
Operating Junction Temperature and Storage Temperature Range 工作结温度和存储温度范围 Tj, Tstg:-65~+150℃
SMDJ100A瞬态抑制二极管,DO-214AB/SMC封装尺寸:

〈烜芯微/XXW〉专业制造二极管,三极管,MOS管,桥堆等,20年,工厂直销省20%,上万家电路电器生产企业选用,专业的工程师帮您稳定好每一批产品,如果您有遇到什么需要帮助解决的,可以直接联系下方的联系号码或加QQ/微信,由我们的销售经理给您精准的报价以及产品介绍
联系号码:18923864027
QQ:709211280