XXW3012场效应管,N+PMOS管XXW3012参数资料,XXW3012引脚图,XXW3012中文资料规格书PDF
![XXW3012 场效应管](http://www.ejiguan.cn/uploadfile/2024/0222/20240222075147801.jpg)
XXW3012 TO252-4封装参数:点击查看![XXW3012 场效应管](http://www.ejiguan.cn/uploadfile/2021/0809/20210809054154563.jpg)
![XXW3012 场效应管](http://www.ejiguan.cn/uploadfile/2021/0809/20210809054154563.jpg)
极性:NPN+PNP
NPN极参数如下:
NPN极参数如下:
Drain-Source Voltage 漏源电压Vds:30V
Gate-Source Voltage 栅源电压Vgs:±20V
Continuous Drain Current 漏极电流Id Tc=25℃:12A
Power Dissipation 功率损耗Pd Ta=25℃:10.8W
Power Dissipation 功率损耗Pd Ta=70℃:W
Static Drain-Source On-Resistance 导通电阻ID=5A,VGS=10V: Typ 15mΩ Max 20mΩ
Static Drain-Source On-Resistance 导通电阻ID=3A,VGS=4.5V:Typ 21mΩ Max 29mΩ
Junction and Storage Temperature Range 温度范围:-55~+150℃
PNP极参数如下:
Drain-Source Voltage 漏源电压Vds:-30V
Gate-Source Voltage 栅源电压Vgs:±20V
Continuous Drain Current 漏极电流Id Tc=25℃:-12A
Power Dissipation 功率损耗Pd Ta=25℃:10.8W
Power Dissipation 功率损耗Pd Ta=70℃:W
Static Drain-Source On-Resistance 导通电阻ID=-4.1A,VGS=-10V: Typ 35mΩ Max 50mΩ
Static Drain-Source On-Resistance 导通电阻ID=-3A,VGS=-4.5V:Typ 49mΩ Max 75mΩ
Junction and Storage Temperature Range 温度范围:-55~+150℃
XXW3012场效应管TO252-4L封装尺寸:
![XXW3012 场效应管](http://www.ejiguan.cn/uploadfile/2024/0221/20240221083756379.png)
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