20G10,20G10场效应管参数,N+P场效应管20G10,20G10代换
20G10场效应管,N+PMOS管20G10参数资料,20G10引脚图,20G10中文资料规格书PDF
20G10场效应管,N+PMOS管20G10参数资料,20G10引脚图,20G10中文资料规格书PDF
![20G10](http://www.ejiguan.cn/uploadfile/2024/0220/20240220052015440.jpg)
20G10 PDFN5*6封装参数:点击查看![20G10 场效应管](http://www.ejiguan.cn/uploadfile/2021/0809/20210809054154563.jpg)
![20G10 场效应管](http://www.ejiguan.cn/uploadfile/2021/0809/20210809054154563.jpg)
极性:NPN+PNP
NPN极参数如下:
NPN极参数如下:
Drain-Source Voltage 漏源电压Vds:100V
Gate-Source Voltage 栅源电压Vgs:±20V
Continuous Drain Current 漏极电流Id Tc=25℃:15A
Power Dissipation 功率损耗Pd Ta=25℃:3.5W
Power Dissipation 功率损耗Pd Ta=70℃:W
Static Drain-Source On-Resistance 导通电阻ID=5A,VGS=10V: Typ 65mΩ Max 90mΩ
Static Drain-Source On-Resistance 导通电阻ID=3A,VGS=4.5V:Typ 75mΩ Max 105mΩ
Junction and Storage Temperature Range 温度范围:-55~+150℃
PNP极参数如下:
Drain-Source Voltage 漏源电压Vds:-100V
Gate-Source Voltage 栅源电压Vgs:±20V
Continuous Drain Current 漏极电流Id Tc=25℃:-7A
Power Dissipation 功率损耗Pd Ta=25℃:3.5W
Power Dissipation 功率损耗Pd Ta=70℃:W
Static Drain-Source On-Resistance 导通电阻ID=-3A,VGS=-10V: Typ 180mΩ Max 220mΩ
Static Drain-Source On-Resistance 导通电阻ID=-2A,VGS=-4.5V:Typ 210mΩ Max 255mΩ
Junction and Storage Temperature Range 温度范围:-55~+150℃
20G10场效应管PDFN5*6-8L封装尺寸:
![20G10 场效应管](http://www.ejiguan.cn/uploadfile/2023/0620/20230620092435598.png)
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