AO4559,AO4559场效应管参数,N+P场效应管AO4559,AO4559代换
AO4559场效应管,N+PMOS管AO4559参数资料,AO4559引脚图,AO4559中文资料规格书PDF
AO4559场效应管,N+PMOS管AO4559参数资料,AO4559引脚图,AO4559中文资料规格书PDF
AO4559/SOP-8/SOIC-8封装参数:点击查看
极性:NPN+PNP
NPN极参数如下:
NPN极参数如下:
Drain-Source Voltage 漏源电压Vds:60V
Gate-Source Voltage 栅源电压Vgs:±20V
Continuous Drain Current 漏极电流Id Tc=25℃:6A
Power Dissipation 功率损耗Pd Ta=25℃:2.5W
Power Dissipation 功率损耗Pd Ta=70℃:W
Static Drain-Source On-Resistance 导通电阻ID=5A,VGS=10V: Typ 30mΩ Max 40mΩ
Static Drain-Source On-Resistance 导通电阻ID=3A,VGS=4.5V:Typ 36mΩ Max 50mΩ
Junction and Storage Temperature Range 温度范围:-55~+150℃
PNP极参数如下:
Drain-Source Voltage 漏源电压Vds:-60V
Gate-Source Voltage 栅源电压Vgs:±20V
Continuous Drain Current 漏极电流Id Tc=25℃:-6.5A
Power Dissipation 功率损耗Pd Ta=25℃:2.5W
Power Dissipation 功率损耗Pd Ta=70℃:W
Static Drain-Source On-Resistance 导通电阻ID=-3.5A,VGS=-10V: Typ 70mΩ Max 100mΩ
Static Drain-Source On-Resistance 导通电阻ID=-3.1A,VGS=-4.5V:Typ 100mΩ Max 115mΩ
Junction and Storage Temperature Range 温度范围:-55~+150℃
AO4559场效应管SOP-8/SOIC-8封装尺寸:
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