AO4884,AO4884场效应管参数,AO4884参数规格书,AO4884代换
AO4884场效应管,双NMOS管AO4884参数资料,AO4884引脚图,AO4884中文资料规格书PDF
AO4884场效应管,双NMOS管AO4884参数资料,AO4884引脚图,AO4884中文资料规格书PDF
AO4884/SOP-8/SOIC-8封装参数:点击查看
极性:NPN
Drain-Source Voltage 漏源电压Vds:40V
Gate-Source Voltage 栅源电压Vgs:±20V
Continuous Drain Current 漏极电流Id Tc=25℃:12A
Power Dissipation 功率损耗Pd Ta=25℃:2.9W
Power Dissipation 功率损耗Pd Ta=70℃:W
Static Drain-Source On-Resistance 导通电阻ID=8A,VGS=10V: Typ 12mΩ Max 16mΩ
Static Drain-Source On-Resistance 导通电阻ID=4A,VGS=4.5V:Typ 18.9mΩ Max 24mΩ
Junction and Storage Temperature Range 温度范围:-55~+150℃
AO4884场效应管SOP-8/SOIC-8封装尺寸:
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