AO4842,AO4842场效应管参数,AO4842参数规格书,AO4842代换
AO4842场效应管,双NMOS管AO4842参数资料,AO4842引脚图,AO4842中文资料规格书PDF
AO4842场效应管,双NMOS管AO4842参数资料,AO4842引脚图,AO4842中文资料规格书PDF
AO4842/SOP-8/SOIC-8封装参数:点击查看
极性:NPN
Drain-Source Voltage 漏源电压Vds:30V
Gate-Source Voltage 栅源电压Vgs:±20V
Continuous Drain Current 漏极电流Id Tc=25℃:8A
Power Dissipation 功率损耗Pd Ta=25℃:1.5W
Power Dissipation 功率损耗Pd Ta=70℃:W
Static Drain-Source On-Resistance 导通电阻ID=7A,VGS=10V: Typ 17mΩ Max 19mΩ
Static Drain-Source On-Resistance 导通电阻ID=4A,VGS=4.5V:Typ 22mΩ Max 28mΩ
Junction and Storage Temperature Range 温度范围:-55~+150℃
AO4842场效应管SOP-8/SOIC-8封装尺寸:
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