12N65场效应管,12A 650V,12N65参数资料,12N65引脚图,12N65中文资料规格书PDF
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12N65/TO-220F参数封装:点击查看
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12N65封装有TO-220/TO-220F/TO-252
极性:NPN
Drain-Source Voltage 漏源电压Vds:650V
Drain-Source Voltage 漏源电压Vds:650V
Gate-Source Voltage 栅源电压Vgs:±30V
Continuous Drain Current 漏极电流Id Tc=25℃:12A
Continuous Drain Current 漏极电流Id Tc=100℃:7.9A
Power Dissipation 功率损耗Pd:44W
Static Drain-Source On-Resistance 导通电阻ID=3.5A,VGS=10V:Max 0.68Ω
Junction and Storage Temperature Range 温度范围:-55~+150℃
12N65场效应管/TO-220封装尺寸:
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12N65场效应管/TO-220F封装尺寸:
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12N65场效应管/TO-252封装尺寸:
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